​As transistor structures continue to shrink to keep pace with Moore's Law the existing analysis and metrology techniques currently in use will no longer be sufficient to fully characterize the nanoscale devices. Atom probe has the unique capability to characterize the next-generation technology cycles by mapping the spatial distribution and chemical identity of dopants on the atomic scale.

The image on the left shows the 3D reconstruction results of a patterned semiconductor test structure analyzed by CAMECA's LEAP Si system; a photo taken from a TEM microscope of the equivalent structure is also shown alongside for comparison.

The polysilicon layer (polysilicon) is deposited on a <100> oriented single crystal silicon wafer, then masked (masked) and etched (etched) before proceeding with arsenic ion implantation (As implant).

The gate dielectric layer (gate dielectric) is located just below the poly-Si line. The As atoms (purple spherical molecules) are on one side of the poly-Si line with a small amount distributed horizontally. The gate oxide (gate oxide) and native oxide (native oxide) are represented by the blue oxygen isoconcentration surface (blue oxygen isoconcentration surface). The morphology of the oxide surface indicates that the ion implantation process has led to significant mixing between the native oxide layer and the Si substrate (Si substrate).

Sample provided by Intel Corporation. 

TEM image provided by the University of Florida.